Дроселi, iндуктивнiсть SMD EMI/RFI iндуктивностi (chip bead): BLM18AG102SN1D; BLM18AG121SN1D; BLM18HE152SN1D; BLM21PG220SN1D; BLM21PG221SN1; BLM21PG600SH1D; BLM31PG121SN1L; FBM0603ST102S; FASBL1608A102H; FASBL2012A102H; Дроселi, iндуктивнiсть Дроселi, iндуктивнiсть
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  : PIC12F629
 
 
 
 
 
 
 
 

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  *.zip

  *.xls
16.05.22 .



48 .
-  - Дроселi, iндуктивнiсть - SMD EMI/RFI iндуктивностi (chip bead)

BLM18AG102SN1D


 

:
EMI/RFI (chip bead) 1000 (100), DCR 0.5 , 0.45
: SMD 0603



:
 

BLM18AG121SN1D


 

:
EMI/RFI (chip bead) 120 (100), DCR 0.18 , 0.8
: SMD 0603



:
 

BLM18HE152SN1D


 

:
EMI/RFI (chip bead) 1500 (100), DCR 0.5 , 0.5
: SMD 0603



:
 

BLM21PG220SN1D


 

:
EMI/RFI (chip bead) 22 (100), DCR 0.07 , 6.0
: SMD 0805



:
 

BLM21PG221SN1


 

:
EMI/RFI (chip bead) 220 (100), DCR 0.045 , 2.0
: SMD 0805



:

  :
MCP1525T-I/TT

FSMD020-1206

SMA001-R/A

FASBL2012A102H

MCP601T-I/OT

 

BLM21PG600SH1D


 

:
EMI/RFI (chip bead) 60 (100), DCR 0.07 , 1.5
: SMD 0805



:
 

BLM31PG121SN1L


 

:
EMI/RFI (chip bead) 120 (100), DCR 0.08 , 3.5
: SMD 1206



:
 

FBM0603ST102S


 

:
EMI/RFI (chip bead) 1000 (100), DCR 0.7 , 0.2
: SMD 0603



:
 

FASBL1608A102H


 

:
EMI/RFI (chip bead) 1000 (100), DCR 0.6 , 0.1
: SMD 0603



:

  :
SIM900R

FSMD020-1206

BLM21PG221SN1

FASBL2012A102H

SJK 16,000MHz 7G

 

FASBL2012A102H


 

:
EMI/RFI (chip bead) 1000 (100), DCR 0.45 , 0.1
: SMD 0805



:

  :
FSMD020-1206

SJK 32,768kHz 6K6(-40*C)

FASDRH6D38-3R3N

SPI-0402T-220

SIM900R

 
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